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13 - Electrical and Electronic Engineering, Metallurgy and Materials
Glyndŵr University
Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)
This paper addresses a particular aspect of a major roadblock in the industrial commercisation of CPV solar, power electronics, and solid state lighting - namely using lower cost large format silicon wafers to drive more cost competitive products. All publications utilize a rare earth oxide (REO) as a buffer layer between the device epitaxy and the substrate. In CPV solar, growth of Ge allows GaAs based solar junction onto silicon substrates (single junction demonstrated). In power and lighting, growth of GaN onto REO allows power FETs and LEDs onto silicon substrates (FETs demonstrated, LED mirrors, and LED PL demonstrated).