Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Glyndŵr University
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Article title
Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)
Type
D - Journal article
Title of journal
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Article number
-
Volume number
30
Issue number
2
First page of article
02B110
ISSN of journal
10711023
Year of publication
2012
URL
-
Number of additional authors
7
Additional information
This paper addresses a particular aspect of a major roadblock in the industrial commercisation of CPV solar, power electronics, and solid state lighting - namely using lower cost large format silicon wafers to drive more cost competitive products. All publications utilize a rare earth oxide (REO) as a buffer layer between the device epitaxy and the substrate. In CPV solar, growth of Ge allows GaAs based solar junction onto silicon substrates (single junction demonstrated). In power and lighting, growth of GaN onto REO allows power FETs and LEDs onto silicon substrates (FETs demonstrated, LED mirrors, and LED PL demonstrated).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
