Output details
15 - General Engineering
University of Bolton
Article title
Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
-
Volume number
106
Issue number
2
First page of article
023714
ISSN of journal
00218979
Year of publication
2009
URL
-
Number of additional authors
9
Additional information
IF = 2.168
The influence of anisotropic strain on the valence band structure and related properties, including excitonic transition energies, polarization selection rules and hole effective masses, for polar/nonpolar plane GaN are calculated employing k.p perturbation theory. Edwards led the theoretical efforts establishing software modelling capability for calculating the optical properties of wide bandgap semiconductors. This work has added to the scientific understanding that has assisted in the development of solid state lighting, based on the blue LED.
Interdisciplinary
-
Cross-referral requested
-
Research group
3 - Renewable Energy (RE)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
