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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

Imperial College London : B - Metallurgy and Materials

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Output 46 of 140 in the submission

Article title

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Type

D - Journal article

DOI

10.1063/1.3065030

Title of journal

Applied Physics Letters

Article number

ARTN 022109

Volume number

Issue number

First page of article

ISSN of journal

0003-6951

Year of publication

2009

URL

Number of additional authors

Additional information

InN is widely used in combination with GaN or AlN to produce high efficiency optoelectronic devices. To optimise these devices their electronic behaviour needs to be fully understood. In this work we have shown many of the previous assumptions of relationship between electronic behaviour of InN and processing parameters are incorrect and that incorporation of point defects is also important, particularly hydrogen. This work was initially funded by a Swedish research council grant: 2005-5054 and has led to further funding for 3 years also funded by the Swedish research council, grant No:2010-3848, value ~£230K.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract