Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
9
First page of article
3081
ISSN of journal
1557-9646
Year of publication
2011
URL
-
Number of additional authors
-
Additional information
The Q2D model developed in the paper provides very accurate simulation results for LDMOS devices in a fraction of the time of full 2D simulators, and as such is a powerful tool for use in non-linear CAD design for power amplifier applications. The approach is now being developed and used in-house by Freescale Semiconductor in Tempe, Arizona, who are one of the World’s largest manufacturers of high frequency, high power LDMOS devices for cellular telecommunications base stations. The benefits include greatly enhanced design flexibility and the systematic analysis of process variations.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-