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InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy

Demonstrated a significant advance in material growth for InGaAsP uni-travelling carrier photodiodes (UTC-PDs) using Solid Source Molecular Beam Epitaxy (SS MBE). Zinc is a common acceptor but diffuses rapidly during growth leading to device performance degradation. The key novelty of this work is the successful incorporation of beryllium as an alternative acceptor for the SS MBE growth, which is expected to produce better and more reliable UTC-PDs for THz imaging and communication applications. SS MBE further avoids the use of toxic arsine and phosphine gases for material growth and is thus expected to have a reduced environmental impact.