Output details
15 - General Engineering
University of Warwick
Article title
On the mechanism of recombination at oxide precipitates in silicon
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
042105
Volume number
102
Issue number
4
First page of article
-
ISSN of journal
0003-6951
Year of publication
2013
URL
-
Number of additional authors
3
Additional information
Defects which limit the efficiency of silicon solar cells have attracted a great deal of attention. A novel experimental approach (combining advanced analysis of injection-dependent lifetime data with iron loss measurements) has resulted in a new model for recombination at an important class of defects. This ends 30+ years of debate. This understanding is being used to overcome the 4% (absolute) losses due to the defects in question. The research was the subject of invited talks at the Gordon Research Conference on Defects in Semiconductors (2012), the Electrochemical Society Conference (2012) and at the NREL Workshop (2013).
Interdisciplinary
-
Cross-referral requested
-
Research group
D - Multifunctional Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
