Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
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Article title
Impact Ionization Coefficients in 4H-SiC
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
55
Issue number
8
First page of article
1984
ISSN of journal
00189383
Year of publication
2008
URL
-
Number of additional authors
7
Additional information
Accurate knowledge of the ionization coefficients in SiC is important for the design of power devices. The data in the literature has been obtained primarily on relatively low voltage structures. This work investigates the ionization coefficients in structures that operate at lower electric fields and showed that the previous extrapolated data was significantly wrong by almost an order of magnitude. This work was undertaken in collaboration with GE, USA, and provides a good basis for understanding sensors, including the ionization rates used in their power device models. Contact: Peter Sandvik, Manager, Semiconductor Technology Lab., tel: 001- 518-387-4166, email: sandvik@ge.com
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
