Output details
15 - General Engineering
University of Warwick
Article title
Bandstructure Effects in Silicon Nanowire Electron Transport
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
55
Issue number
6
First page of article
1286
ISSN of journal
0018-9383
Year of publication
2008
URL
-
Number of additional authors
3
Additional information
The paper investigates atomistic effects in nanowire electronics. It is one of the first such studies which pointed out how properties of nanoscale semiconductors can be designed. The work explained important effects that were then the topic of several subsequent publications (e.g. DOI 10.1007/s10825-008-0188-4 and 10.1063/1.3372764), and conference talks in international conferences (e.g IEEE SISPAD, September 2009).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
