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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of York

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Output 19 of 85 in the submission

Article title

Dember type voltage and nonlinear series resistance of the optical confinement layer of a high-power diode laser

Type

D - Journal article

DOI

10.1063/1.4795586

Title of journal

Journal of Applied Physics

Article number

113108

Volume number

113

Issue number

First page of article

ISSN of journal

0021-8979

Year of publication

2013

URL

http://jap.aip.org/resource/1/japiau/v113/i11/p113108_s1

Number of additional authors

Additional information

The paper contributes to the understanding and optimisation of high-power laser diodes. In collaboration with A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia, it is shown analytically that at very high injection levels, doping the waveguide layer leads to almost negligible decrease in its effective resistance. The paper originated following an invited presentation at 2012 IEEE Photonics Society Summer Topical Meeting on High Power Semiconductor Lasers.

Interdisciplinary

Cross-referral requested

Research group

C - Physical Layer

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract