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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

Liverpool John Moores University

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Output 11 of 19 in the submission

Article title

Investigation of Abnormal V-TH/V-FB Shifts Under Operating Conditions in Flash Memory Cells With Al2O3 High-kappa Gate Stacks

Type

D - Journal article

DOI

10.1109/TED.2012.2194294

Title of journal

IEEE TRANSACTIONS ON ELECTRON DEVICES

Article number

Volume number

Issue number

First page of article

1870

ISSN of journal

0018-9383

Year of publication

2012

URL

Number of additional authors

Additional information

* The first paper ever that identified the abnormal VTH/VFB shift at low operating electric fields, caused by as-grown mobile charges in Al2O3 in Flash memory cells.

* Significant as its impacts on program/erase windows in Flash memory cells are revealed for the first time; critical for the development of novel memory dielectric materials.

* The results have been disseminated to industry companies, e.g. Intel/Micron. Dr Kirk Prall, The Director of Emerging Memories at Micron (kprall@micron.com) specifically asked for the technical details after the results presentation at IEDM 2011, so that the issues could be resolved in their product development.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract