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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Surrey

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Article title

Single Event Effects in Power MOSFETs Due to Atmospheric and Thermal Neutrons

Type
D - Journal article
Title of journal
IEEE Transactions on Nuclear Science
Article number
-
Volume number
58
Issue number
6
First page of article
2687
ISSN of journal
0018-9499
Year of publication
2011
URL
-
Number of additional authors
-
Additional information

This paper provides the first report of power MOSFETS suffering single event destructive burnout (SEB) caused by extremely low energy thermal neutron environments. Since the flux of thermalized neutrons in many practical cases can exceed that of the primary fast neutrons such effects are potentially significant for future electronic reliability in aerospace and nuclear applications. In addition the paper makes the first observation of another damage effect, single event gate rupture (SEGR), occurring under fast neutron irradiation. The impact is to enable better quantification of reliability of power devices in aviation environments as we move to the all-electric aircraft.

Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-