Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
92
Issue number
8
First page of article
082109
ISSN of journal
00036951
Year of publication
2008
URL
-
Number of additional authors
-
Additional information
The semiconductor technology roadmap requires ultra shallow junctions for technology nodes of 32 nm and beyond. This paper shows, for the first time, a solution which does not involve additional process steps and removes the problem at source. By carefully tailoring the annealing conditions it is possible to remove the end of range defects which give rise to the anomalous B diffusion. This led to improved device performance at cheaper processing costs, as the laser anneal substitutes for the conventional thermal anneal and also improves the electrical dopant activation.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
