Output details
15 - General Engineering
University of Exeter
Article title
Reduction in Shockley–Read–Hall generation-recombination in AlInSb light-emitting-diodes using spatial patterning of the depletion region
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
213510
Volume number
94
Issue number
21
First page of article
213510
ISSN of journal
00036951
Year of publication
2009
URL
-
Number of additional authors
1
Additional information
Limits to the efficiency of semiconductor LEDs prevent the wide-scale adoption of LED technology in areas as diverse lighting and sensing. This paper describes a completely new method for improving the efficiency of LEDs which forms the basis of newly granted US patent “Semiconductor Device and Fabrication Method”, US Patent 8450771. As the technique could be applied to any semiconductor LED, it is being protected by QinetiQ Ltd (patent attorney Dr Liz Humphreys, ejhumphreys@QinetiQ.com).
Interdisciplinary
-
Cross-referral requested
-
Research group
2 - The Functional Materials Group
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
