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8-band k.p modelling of the quantum confined Stark effect in Ge quantum wells on Si substrates

This theoretical work analyses the behaviour at telecoms frequencies from Ge quantum well Stark-effect modulators on silicon substrates. The calculations demonstrate that absorption is dominated by the direct band gap, and make first predictions of the absorption for different polarizations, quantum well widths, electric fields and strain so that future modulators can be engineered for high performance. This technology is being pursued for femto-joule optical switches for high-bandwidth chip-to-chip optical interconnects. The work resulted in 4 invited talks and the modeling techniques contributed towards the award of a 2.2M Euro (GREEN Si FP7 No. 257750) on germanium quantum well thermoelectrics.