Output details

Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process

This was a Journal Highlight Paper (top 7% of papers) of 2009 (most cited, most downloaded or of the highest quality rating). It resulted in invited talks at Printed Electronics Europe 2011 and Printed Electronics USA 2011 (http://www.idtechex.com/printed-electronics-usa-11/speakers.asp) and contributed to a successful application for an EU Framework 7 project on oxide electronics (grant no. CP-IP 246334-2, start 07/2010; GBP491,707 value to Flewitt’s group out of EUR9.7M total). Flewitt was invited to lead the high speed device testing work in the GBP5.6M EPSRC Centre for Innovative Manufacturing in Large-Area Electronics (EP/K03099X/1) (~GBP150k value to Flewitt's group; start 10/2013).