Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Salford
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Article title
Atomic Layer Deposition of Ru/RuO2Thin Films Studied by In situ Infrared Spectroscopy
Type
D - Journal article
Title of journal
Chemistry of Materials
Article number
-
Volume number
22
Issue number
17
First page of article
4867
ISSN of journal
1520-5002
Year of publication
2010
URL
-
Number of additional authors
6
Additional information
This paper is concerned with the atomic layer deposition of ruthenium using a precursor that was designed specifically for the purpose at Salford (inclusion of an ethyl group to favour H elimination) and synthesized using a new procedure devised at Salford that made it commercially viable. The primary commercial application of ruthenium thin films grown by ALD is as a barrier layer. It was part of programme funded by Epichem (and latterly SAFC HiTech) at Salford into commercially viable transition metal ALD precursors. This work is the subject of a patent application.
Interdisciplinary
-
Cross-referral requested
-
Research group
B - Materials synthesis and characterisation
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-