Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Newcastle University
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Output 0 of 0 in the submission
Article title
Anomalous resistive switching phenomenon
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
124516
Volume number
112
Issue number
12
First page of article
-
ISSN of journal
1089-7550
Year of publication
2012
Number of additional authors
6
Additional information
This is one of the key outcomes from a project led by Newcastle (EP /H023666, £528,499) with Imperial College (n.alford@imperial.ac.uk), Intel (Bernard.d.capraro@intel.com) and CPI (David.Robbins@uk-cpi.com). Research on metal oxide thin films is an emerging research area at Newcastle. The new resistive switching mechanism (“antipolar”) is important for the understanding of leakage current in semiconductor elements that use SrTiO3 (it is a promising material for inclusion in MOSFET gates and resistive random access memory (RRAM)). A new resistive switching mechanism may also lead to new resistive non-volatile memory device concepts.
Interdisciplinary
-
Cross-referral requested
-
Research group
B - Emerging Technologies & Materials (ETM)
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-