Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Newcastle University
Analysis of self-heating effects in ultrathin-body SOI MOSFETs by device simulation
This invited paper concerns issues relating to heating effects in MOSFETS as dimensions shrink. It is joint with Bologna University (world leaders in device simulation). Heating is a major challenge as integrated circuits shrink and a chief reason why there has been a shift to multi-core processors. This research involves computer simulation to understand self-heating and points to potential solutions through improved device design. It draws attention to the ultra thin films used in CMOS having a much larger “effective” thickness, making them more insulating. This happens because of phonon boundary scattering which reduces their mean free path.