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Direct and Inverse Auger Processes in InAs Nanocrystals: Can the Decay Signature of a Trion Be Mistaken for Carrier Multiplication?

MC-3: This paper explained the disparity between the broad range of experimentally-measured multiple-exciton-generation rates that had been reported in the literature, by demonstrating that multiple-exciton-generation was not due to unbalanced charges (as had previously been supposed), but rather the surface chemistry. The impact of this work on the field led to three invited talks at international conferences including ICONN 2010 (Sydney, Australia), and the design of new sets of experiments to identify surface trap states as the origin of spurious multiple-exciton-generation signals, and strategies to remove them (see, for example, Padilha et al, ACS Nano 5, 5045-5055 (2011)).