Output details
15 - General Engineering
University of Durham
Article title
Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy.
Type
D - Journal article
Title of journal
Physical Review B
Article number
035302
Volume number
82
Issue number
3
First page of article
-
ISSN of journal
1098-0121
Year of publication
2010
Number of additional authors
10
Additional information
This work led to a sustained collaboration between Durham, IOFFE institute and St Petersburg academic University and formed the basis for an FP7 grant (FUNPROB, funded by the European commission) involving 9 European partners and also led award of a Royal Academy of Engineering Distinguished Visiting Fellowship in 2010. The VLSI model, proposed to explain the phase purity and the coexistence of single crystals zincblende and wurtzite structures is now widely accepted in the nanowires research community. The results also initiated the formulation of 2 EU consortia projects (FUNPROB and NanoEmbrace, funded in excess of 3.8 million) under FP7.
Interdisciplinary
-
Cross-referral requested
-
Research group
B - Electronics Research Group
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
