Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Leeds
Shape-engineered epitaxial InGaAs quantum rods for laser applications
LL-2: Quantum rods (QRs) have potential advantages over quantum dots in optoelectronic devices, e.g. enabling control of the polarization of emitted radiation. However, the difficulties in fabricating QRs have limited their application, with e.g. colloidal QRs prepared by chemical synthesis being sensitive to surface traps. This paper demonstrates artificial shape engineering of epitaxial semiconductor nanostructures to fabricate embedded InGaAs QRs, and their applicability to optoelectronic devices. Building on this work, we fabricated the first-ever TM-polarized semiconductor laser based on compressive strain InGaAs QRs, with Cardiff, EPFL, Eindhoven and LPN/CNRS (Applied Physics Letters 95, 221116 (2009)).
