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Probing the Bonding and Electronic Structure of Single Atom Dopants in Graphene with Electron Energy Loss Spectroscopy

Working with the Manchester group, for the first time we have observed and interpreted the minute changes in the bonding and electronic properties in a single sheet of graphene doped with a single atom of silicon. We identify both 4-fold and extremely rare 3-fold coordinated Si and deviations from planarity. Chemical doping (or impurities) will modify the conductivity of this material, the control of which will be necessary if e.g. a graphene based transistor is achievable. Underpins £21.5M EPSRC investment aimed at increased 'manufacturability' of graphene. Nature Nanotechnology (Vol. 8, 2013) reports this work as a major research highlight.