Output details
15 - General Engineering
University of Bolton
Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films
IF = 3.844
The k.p perturbation theory is adopted to calculate the strain-modulated excitonic transition energies and polarization properties for c/m plane AlN. The strain conditions, for when the surface emission efficiency of the AlN films are enhanced, are elucidated. Edwards was awarded a research sabbatical from Bolton in 2007 to collaborate with the Department of Physics, Nanjing University, China. Edwards led the theoretical efforts establishing software modelling capability for calculating the optical properties of wide bandgap semiconductors. This work has contributed to the science that has allowed Sensor Electronic Technology to develop UV LEDs for water purification.