Output details
15 - General Engineering
University of Glasgow
An ultra-low-power MMIC amplifier using 50nm delta -Doped In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMT
The performance of an ultra-low-power monolithic amplifier using 50nm gate-length metamorphic HEMTs is described. The single-stage amplifier consumes only 0.9mW, the lowest reported for an amplifier operating in the 24GHz band. The MMIC technology developed in this work is a critical building block in wireless sensor networks that are widely predicted to have major growth opportunities in imaging, safety, biomedical and environmental applications. The research was a factor in securing funding from BAE Systems (£81k) and QinetiQ (£116k). The paper also resulted in an invited talk at the prestigious European Microwave Integrated Circuits Conference, Manchester, 2011 (http://www.eumweek.com/2011/default.asp).