Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Leeds
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Article title
In-assisted desorption of native GaAs surface oxides
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
061910
Volume number
99
Issue number
6
First page of article
-
ISSN of journal
0003-6951
Year of publication
2011
URL
-
Number of additional authors
3
Additional information
LL-4: Cleaning of a GaAs surface prior to MBE growth is conventionally achieved by thermal desorption of the surface oxide layer. However, this results in a pitted surface owing to GaAs removal, requiring planarization with a thick GaAs layer. This prevents regrowth of nanostructures on patterned substrates close to the regrowth interface. We demonstrated indium-assisted desorption of native GaAs surface oxides at low substrate temperatures, showing feasibility for the regrowth of high quality quantum dot structures. The work was patented (WO2012/123741, priority 14/03/2011, now under examination in Europe/US/China), and technology translation is being explored with Toshiba, inter alia.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
