Output details
15 - General Engineering
University of Glasgow
Article title
AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
5
First page of article
1418
ISSN of journal
0018-9383
Year of publication
2011
URL
-
Number of additional authors
2
Additional information
This paper describes the processing and characterisation of a new GaN FET technology employing an AlN barrier layer. The technology is expected to enable compact and highly efficient radar systems for commercial and military applications. The GaN FET is also a potential replacement for magnetrons in domestic microwave ovens, being lighter and offering higher efficiency. The work was a factor in securing a Ministry of Defence contract (DSTLX-1000064098) and the EPSRC-funded UK National Project on "Silicon-compatible GaN Power Electronics" (EP/K014471/1 - £6.19M). The latter project, comprising 6 other UK universities and over 10 UK semiconductor manufacturers, is led by Glasgow.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Electronics & Nanoscale Engineering
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
