Output details
15 - General Engineering
University of Warwick
Article title
Bandstructure Effects in Silicon Nanowire Hole Transport
Type
D - Journal article
Title of journal
IEEE Transactions on Nanotechnology
Article number
-
Volume number
7
Issue number
6
First page of article
710
ISSN of journal
1941-0085
Year of publication
2008
URL
-
Number of additional authors
2
Additional information
The paper is one of the first comprehensive investigations of the electronic properties of p-type nanowires. It made the cover of the IEEE Transactions of Nanotechnology, on the special issue on nanowire electronics, and contributed to two talks at the IEEE International Conference on Simulation of Semiconductor Processes and Devices (2010, 2011).
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
