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Output details

15 - General Engineering

Aston University

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Output 19 of 89 in the submission

Article title

Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures

Type

D - Journal article

DOI

10.1063/1.2838338

Title of journal

Applied physics letters

Article number

061904

Volume number

Issue number

First page of article

061904

ISSN of journal

0003-6951

Year of publication

2008

URL

http://dx.doi.org/10.1063/1.2838338

Number of additional authors

Additional information

This paper presents the first demonstration of a technology to produce < 100 nanometer layers of silicon on insulator. Immediately following publication, the commercial importance of the paper was chosen as a highlight by Journal of Engineering in the 31 March 2008 edition. The method established in the paper was granted a US patent (07736996) in 2010 and has been used commercially by Freescale Semiconductors (David Theodore, n.d.theodore@freescale.com). The experimental results and analysis described in this paper provide a method to design specific layer thicknesses, which will allow a wide range of commercial application.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract