Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Open University
Ion flux and ion distribution function measurements in synchronously pulsed inductively coupled plasmas
A robust process monitoring sensor for materials processing plasmas was conceived and patented by Braithwaite in 1995. Since then he has further developed it and many international groups have adopted it. In 2008 Lam Research, a $7.5 billion company making semiconductor processing equipment, began installing the sensor in dielectric and metal etch tools. The same method has been adapted for use in pulsed plasma etching, as reported here. Pulsed plasmas are shown to be more controllable than CW plasmas for semiconductor processing. For three months following publication this article featured in the top 20 downloads of the journal.