Output details
15 - General Engineering
Aston University
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Article title
Cracking in hydrogen ion-implanted Si/Si0.8Ge0.2/Si heterostructures
Type
D - Journal article
Title of journal
Applied physics letters
Article number
061904
Volume number
92
Issue number
6
First page of article
061904
ISSN of journal
0003-6951
Year of publication
2008
Number of additional authors
5
Additional information
This paper presents the first demonstration of a technology to produce < 100 nanometer layers of silicon on insulator. Immediately following publication, the commercial importance of the paper was chosen as a highlight by Journal of Engineering in the 31 March 2008 edition. The method established in the paper was granted a US patent (07736996) in 2010 and has been used commercially by Freescale Semiconductors (David Theodore, n.d.theodore@freescale.com). The experimental results and analysis described in this paper provide a method to design specific layer thicknesses, which will allow a wide range of commercial application.
Interdisciplinary
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Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-