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Output details

9 - Physics

Output 26 of 191 in the submission

Article title

Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure

Type

D - Journal article

DOI

Title of journal

IEEE Electron Device Letters

Article number

Volume number

Issue number

First page of article

1395

ISSN of journal

0741-3106

Year of publication

2010

URL

Number of additional authors

Additional information

Interdisciplinary

Cross-referral requested

Research group

F - Micro and Nanostructural Materials

Citation count

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract