Output details
9 - Physics
University of Bristol
Article title
Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering
Type
D - Journal article
Title of journal
Semiconductor Science and Technology
Article number
Article Number: 085004
Volume number
25
Issue number
8
First page of article
2
ISSN of journal
02681242
Year of publication
2010
Number of additional authors
5
Additional information
-
Interdisciplinary
-
Cross-referral requested
-
Research group
F - Micro and Nanostructural Materials
Citation count
6
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-