Output details
15 - General Engineering
University of Warwick
Article title
Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors
Type
D - Journal article
Title of journal
Applied Physics Letters
Article number
-
Volume number
102
Issue number
2
First page of article
023511
ISSN of journal
00036951
Year of publication
2013
URL
-
Number of additional authors
5
Additional information
This paper is recent and analyses the quality of AlGaN/GaN heterostructures that are essential for any future GaN power semiconductor device. In the future we hope that this paper will lead to industrially led improvements in GaN device fabrication techniques. It is highly valuable information on the quality and failure mechanisms of heterojunctions within GaN power devices.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
