Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
A novel route for the inclusion of metal dopants in silicon
First successful application of SIMS to the measurement of manganese dopant introduced into a silicon film by irradiation of manganese doped phthalocyanines. This work has led to development of a standard SIMS protocol for such analyses now routinely used by researchers and students continuing the work. SIMS problems with high ion yields due to oxygen surface contamination were determined and eliminated by removing manganese rich surface contaminants prior to analysis. SIMS profiles of several films led to a diffusion coefficient for manganese in silicon consistent with other reports. Led to invited presentation, International Conference X-Rays&Related Techniques in Research&Industry 2012(ICXR,Penang,2012).
