Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Manchester : B - Electrical and Electronic Engineering
Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
The production of compact, portable, consumer-like THz imaging systems has been so far been unrealised. This paper describes new materials systems and methodologies that resulted in devices having some of the most desirable characteristics for potential use as THz antenna emitters and detectors with low cost commercial telecom lasers. This work, which was published in the leading journal of semiconductor materials, was selected by the APS and AIP for inclusion in the 'SOURCES' section of the Virtual Journal of Ultrafast Science 11(6), (http://www.vjultrafast.org).