Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Open University
Article title
Fluorine codoping in germanium to suppress donor diffusion and deactivation
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
063707
Volume number
106
Issue number
6
First page of article
-
ISSN of journal
1089-7550
Year of publication
2009
Number of additional authors
2
Additional information
Computational models of defect engineering strategies to retard donor atom diffusion and deactivation in Ge were developed to address a key problem in the creation of n-type Germanium-Metal Oxide Semiconductor Field Effect Transistors (Ge-MOSFETs). Our theoretical prediction that fluorine co-doping in germanium can suppress donor diffusion and deactivation was validated experimentally, 2 years later, by Impellizzeri et al. (J. Appl. Phys. 109, 113527 (2011)), following which the leading semiconductors group of Saraswat at Stanford Univ. (Appl. Phys. Lett. 101, 072104 (2012)) has claimed that it leads to significant improvements in the performance of Ge-MOSFETs.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
