Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Southampton
Position-controllable Ge nanowires growth on patterned Au catalyst substrate
Significance of output:
Germanium nanowires are a promising technology for future high-speed electronic devices, optoelectronic devices and quantum information devices. This work is the first demonstration of position control of bottom-up-grown Ge nanowires as a result of precise patterning of gold catalyst using advanced nanofabrication technology. This technological development has opened up the possibility of future Ge nanowire integrated systems/circuits. The work was a major outcome of the 10-year “NeoSilicon” project funded by JST (700M Yen, CREST/SORST, 2000-2010). The technology has been adopted and further developed by several groups e.g. at Imperial College, Tokyo Tech in Japan and CAS in China.
