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Phonon-plasmon coupled-mode lifetime in semiconductors

This is the first demonstration that the density dependence of the lifetime of the longitudinal optical phonon mode in bulk III-V semiconductors (e.g. GaN) is due to the frequency dependence of the anharmonic interaction of coupled phonon-plasmon modes. The agreement between our model and existing experimental results was excellent; citations show the model has been widely adopted by experimentalists. Phonon lifetime is a key parameter in GaN device reliability, identified as a disruptive technology and a key enabler for a low carbon economy. This work led to an investigation of 2D-structures, appropriate for HEMT devices, funded by the US ONR.