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Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO[sub 2](100)

IF=3.844

The anisotropic crystallographic properties of m – plane GaN films, grown on LiAlO2 (100), are investigated experimentally and theoretically. The Williamson - Hall plots indicate that the anisotropy is due to the different tilts and lateral correlation lengths of GaN mosaic blocks. Edwards pursued a research collaboration with the Department of Physics, Nanjing University, China, providing the lead in bandstructure theoretical expertise and directed the software development for calculating the optical properties of wide bandgap semiconductors. This work has added to the scientific understanding that has assisted in the development of solid state lighting, based on the blue LED.