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15 - General Engineering

University of Bolton

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Output 48 of 62 in the submission

Article title

Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films

Type

D - Journal article

DOI

10.1063/1.3136431

Title of journal

Applied Physics Letters

Article number

Volume number

Issue number

First page of article

191907

ISSN of journal

00036951

Year of publication

2009

URL

Number of additional authors

Additional information

IF = 3.844

The k.p perturbation theory is adopted to calculate the strain-modulated excitonic transition energies and polarization properties for c/m plane AlN. The strain conditions, for when the surface emission efficiency of the AlN films are enhanced, are elucidated. Edwards was awarded a research sabbatical from Bolton in 2007 to collaborate with the Department of Physics, Nanjing University, China. Edwards led the theoretical efforts establishing software modelling capability for calculating the optical properties of wide bandgap semiconductors. This work has contributed to the science that has allowed Sensor Electronic Technology to develop UV LEDs for water purification.

Interdisciplinary

Cross-referral requested

Research group

3 - Renewable Energy (RE)

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract