Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Article title
Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
Type
D - Journal article
Title of journal
Semiconductor Science and Technology
Article number
075020
Volume number
24
Issue number
7
First page of article
-
ISSN of journal
13616641
Year of publication
2009
URL
-
Number of additional authors
8
Additional information
A novel dry etching method was invented with excellent selective etch properties. It overcomes the problems with etch damage which previously plagued traditional gate recess dry etches in this materials system. The optimised recipe produced excellent device characteristics and provided the background IP that was instrumental in winning a TSB grant awarded in collaboration with Diamond Microwave Devices (DMD) (Ł3.1 M in collaboration with INEX, MBDA, Element6). High RF power devices were demonstrated using this technology under this programme, which benefited DMD through gaining confidence in the technology which fed into systems design.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
