You are in : Home » Results & submissions » Select UOA » 13 - Electrical and Electronic Engineering, Metallurgy and Materials » View submission: University of Bath » Outputs » Detail

Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Bath

Return to search Previous output Next output

Output 14 of 74 in the submission

Article title

CFD optimisation of up-flow vertical HVPE reactor for GaN growth

Type

D - Journal article

DOI

10.1016/j.jcrysgro.2008.04.017

Title of journal

Journal of Crystal Growth

Article number

Volume number

310

Issue number

First page of article

3358

ISSN of journal

0022-0248

Year of publication

2008

URL

http://dx.doi.org/10.1016/j.jcrysgro.2008.04.017

Number of additional authors

Additional information

The modeling work presented in this paper provided a theoretical base for the design of our own HVPE and HVPE/MOCVD hybrid reactors for the efficient growth of III-V compound semiconductors. Three HVPE reactors related patents were generated through this research (US 7906411, CN 101006548, KR 10-1201589). The project involved collaboration with the largest compound-semiconductor equipment manufacturer in the world (Aixtron) and 11 other European partners. A production tool was built based on these modeling results and used by the university spin-out company NanoGaN.

Interdisciplinary

Cross-referral requested

Research group

A - Advanced Sensor Technologies

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract