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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Queen's University Belfast

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Article title

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Type

D - Journal article

DOI

10.1149/1.3375602

Title of journal

ECS Transactions

Article number

Volume number

Issue number

First page of article

201

ISSN of journal

1938-5862

Year of publication

2010

URL

Number of additional authors

Additional information

This paper summarises the key results of the germanium MOS gate stack development carried out as part of the EPSRC-funded GEMS contract (EP/E030130/1), which included Oxford Instruments and IceMOS Technology Ltd as industrial partners. Both Al2O3 and HfO2 high-K dielectrics, deposited by atomic layer deposition, are characterised using detailed electrical measurements, before and after post-metal anneals. The use of an interfacial GeON layer enhanced the thermal stability of Al2O3-based gate stacks. The GeON layer is conveniently produced by in-situ plasma nitridation in the ALD reactor.

Interdisciplinary

Cross-referral requested

Research group

A - High Frequency Electronics (HFE)

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract