Output details
15 - General Engineering
University of Edinburgh (joint submission with Heriot-Watt University)
Article title
Electrical Test Structures for the Characterization of Optical Proximity Correction
Type
D - Journal article
Title of journal
IEEE
Transactions on Semiconductor Manufacturing
Article number
-
Volume number
25
Issue number
2
First page of article
162
ISSN of journal
0894-6507
Year of publication
2012
URL
-
Number of additional authors
5
Additional information
This invited paper, which extends IEEE ICMTS 2010 (DoI:10.1109/ICMTS.2010.5466866), presents the first comparison of electrical measurements of test structures made directly on a photomask plate, with those made on a silicon wafer patterned using the same mask. It demonstrates the direct characterisation of optical proximity correction; a key resolution enhancement technique in the International Technology Roadmap for Semiconductors (www.ITRS.net). This work is part of an industrial collaboration, which involved Nikon Precision Europe GmbH (Dr. Martin McCallum, email address available) and Compugraphics International.
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Manufacturing & Materials
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
