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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Sheffield : A - Electronic and Electrical Engineering

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Article title

Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Type

D - Journal article

DOI

10.1109/TPEL.2011.2162965

Title of journal

IEEE Transactions on Power Electronics

Article number

Volume number

Issue number

First page of article

3072

ISSN of journal

19410107

Year of publication

2012

URL

Number of additional authors

Additional information

Supported by TSB projects in collaboration with Dynex (Lee Coulbeck@dynexsemi.com, Converteam (stuart.bradley@ge.com), this is the first output to evaluate the influence of the super-junction concept on the performance of a MOS-controlled thyristor device. This next generation device technology has enabled research collaboration with ABB, Switzerland who are evaluating it as a candidate for the next-generation of Silicon power devices. For further information, contact: Dr. M. Rahimo@abb.ch.com.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract