Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Comparative Analysis of VDMOS/LDMOS Power Transistors for RF Amplifiers
This work presents an analytic method for determining matching impedances in RF Power amplifiers in the absence of device large signal models. Methodology uniquely provides significant insight into device operation over conventional models. Research now extended to GaN technology, and currently being implemented in ENIAC-JU funded project PARSIMO (5M Euro) in collaboration with European and UK industry (THALES). The primary motivation is to help SME’s (e.g. SARAS, Leeds) to prototype high efficiency amplifiers with greater accuracy and speed resulting in reduced energy consumption. Several international invited talks/articles arose from work (“Progress of Power devices in RF Applications”, ISPS 2012, Prague).
