Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators
This article with Philips (nigel.young@philips.com), further establishes our reputation for being the first to report instability in ZnO thin film transistors for transparent electronics. Stability is critical because of the sensitivity of the eye to minute detail in electronic displays. The work shows a comparative performance of two insulators widely used in manufacturing and has served as a benchmark for other instability mechanisms reported by more than 16 world-leading universities in Korea, USA, UK, Taiwan and China. Souza invited to talk on instability mechanisms in TFTs at 2013 IMID organised by Korean Information Display Society and Society for Information Display.
