Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
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Article title
Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs
Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
1
First page of article
103
ISSN of journal
15579646
Year of publication
2011
URL
-
Number of additional authors
3
Additional information
The semiconductor material GaInNAs is attractive as it can be grown lattice matched to GaAs, enabling solar cells and photodiodes for telecommunication applications. This work shows the relationship between the addition of nitrogen, the creation of defect states and the device dark currents, so sets the maximum nitrogen incorporation for different applications. The devices show low dark currents even with moderately nitrogen content suggesting that pin diodes and solar cells are technologically feasible. This understanding was one of the main outputs of the EPSRC grant EP/E065007/1 and the EU project MARISE (FP7-ICT-224142) which funded the development of this material system.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
