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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Sheffield : A - Electronic and Electrical Engineering

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Article title

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser

Type

D - Journal article

DOI

Title of journal

Scientific Reports

Article number

477

Volume number

Issue number

First page of article

ISSN of journal

20452322

Year of publication

2012

URL

Number of additional authors

Additional information

Reports on the development of GaAs based quantum dots at 1550nm by molecular beam epitaxy and their use as a saturable absorber in high repetition rate lasers, carried out under the EU FP7 “Fast-dot” project. This work includes collaboration with ETH Zurich and Time-Bandwidth Products, a leading laser manufacturer. Such quantum dots have been the subject of intense research over recent years and this first realization of a laser at this important wavelength is a significant achievement. In addition to improved device performance, enhanced reliability is expected for the laser system, opening the way for higher repetition rate lasers.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract