Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
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Article title
AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage
Type
D - Journal article
Title of journal
IEEE Journal of Quantum Electronics
Article number
-
Volume number
47
Issue number
11
First page of article
1391
ISSN of journal
00189197
Year of publication
2011
URL
-
Number of additional authors
1
Additional information
Reports the world record temperature coefficient of breakdown voltage of 0.97mV/K in APD, lattice matched to InP. This offers the prospect of temperature insensitive APD and single photon avalanche diode with myriad benefits for their deployment in communications and photon counting. Three follow-on journal papers have been published. This work is key to an EPSRC grant (EP/K001469/1, £639k), in collaboration CIP, now Huawei (Michael.Robertson@huawei.com) for optical communication, SELEX (Robert.Lamb@selexgalileo.com) and ID Quantique (alexis.rochas@idquantique.com) for photon counting.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-