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13 - Electrical and Electronic Engineering, Metallurgy and Materials

University of Sheffield : A - Electronic and Electrical Engineering

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Article title

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Type

D - Journal article

DOI

10.1109/JQE.2011.2165051

Title of journal

IEEE Journal of Quantum Electronics

Article number

Volume number

Issue number

First page of article

1391

ISSN of journal

00189197

Year of publication

2011

URL

Number of additional authors

Additional information

Reports the world record temperature coefficient of breakdown voltage of 0.97mV/K in APD, lattice matched to InP. This offers the prospect of temperature insensitive APD and single photon avalanche diode with myriad benefits for their deployment in communications and photon counting. Three follow-on journal papers have been published. This work is key to an EPSRC grant (EP/K001469/1, £639k), in collaboration CIP, now Huawei (Michael.Robertson@huawei.com) for optical communication, SELEX (Robert.Lamb@selexgalileo.com) and ID Quantique (alexis.rochas@idquantique.com) for photon counting.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract